Parametric and tunnel diodes.
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Parametric and tunnel diodes.

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Published by Prentice-Hall in Englewood Cliffs, N.J .
Written in English

Subjects:

  • Diodes, Semiconductor.,
  • Tunnel diodes.

Book details:

Edition Notes

Bibliography: p. 237-253.

SeriesPrentice-Hall series in electrical engineering
Classifications
LC ClassificationsTK7872.D6 C47
The Physical Object
Paginationxiv, 256 p.
Number of Pages256
ID Numbers
Open LibraryOL5909465M
LC Control Number64010745
OCLC/WorldCa1707153

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  texts All Books All Texts latest This Just In Smithsonian Libraries FEDLINK (US) Genealogy Lincoln CollectionPages: OCLC Number: Description: xiv, pages illustrations, diagrams 24 cm. Contents: Part 1: Physics of parametric and tunnel diodes --Chapter 1: Introduction --Chapter 2: Parametric diodes --Chapter 3: Tunnel diodes --Chapter 4: Diode characteristics, design, and fabrication --Part 2: Parametric-diode devices --Chapter 5: Parametric devices --Chapter 6: Theory of parametric. This option allows users to search by Publication, Volume and Page Selecting this option will search the current publication in context. Selecting this option will search all publications across the Scitation platform Selecting this option will search all Cited by: Not Available adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by:

×Close. The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login : P.N. Robson. This result is a generalization of the gainbandwidth limitation for single-varactor parametric amplifiers published recently by the author [1]. Besides the results on gain-bandwidth limitations, the stability of the negative-resistance devices using an arbitrary number of tunnel diodes or varactors is also by: 1.   Quantum tunneling is important in models of the Sun and has a wide range of applications, such as the scanning tunneling microscope and the tunnel diode. Tunneling and Potential Energy To illustrate quantum tunneling, consider a ball rolling along a surface with a kinetic energy of J. the conversion gain, bandwidth, and noise figure of a self excited tunnel diode parametric down converter* A. converter was then built and tests were made in the laboratory for the purpose of verifying the validity cf these expressions. The analytical approach used was similar to that employed by Chang ^ i for a pump driven converter.

  The small minimal value of current is Iv. From the above graph, it is seen that from point A to B current reduces when voltage increases. That is the negative resistance region of diode. In this region, tunnel diode produces power instead of absorbing it. Applications of Tunnel Diode. Tunnel diode can be used as a switch, amplifier, and g: Parametric. Tunnel diodes are fabricated by doping the semiconductor materials at a very high level, one in one thousand or one in one hundred. Germanium and gallium arsenide (Ga As) are used to fabricate tunnel diodes. Construction details are shown in Figure. It is also called Esaki diode. A tunnel diode or Esaki diode is a type of semiconductor diode that has negative resistance due to the quantum mechanical effect called tunneling. It was invented in August by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as production: Sony. Tunnel Diodes (Esaki Diode) Tunnel diode is the p-n junction device that exhibits negative resistance. That means when the voltage is increased the current through it decreases. Esaki diodes was named after Leo Esaki, who in received the Nobel Prize in Physics for discovering the electron tunneling effect used in these diodes. EsakiFile Size: KB.